Caracteristicas de FET (Field Effect Transistor)

Lo anteriormente dicho se puede aplicar al transistor FET, en donde, cuando se aumenta VDS aumenta una región con empobrecimiento de cargas libres.


Cuando seleccionamos un transistor tendremos que conocer el tipo de encapsulado, así como el esquema de identificación de los terminales. Todos estos valores críticos los proporcionan los fabricantes en las hojas de características de los distintos dispositivos. Los transistores son tres zonas semiconductoras juntas dopadas alternativamente con purezas donadoras o aceptadoras de electrones.

Su estructura y representación se muestran en la tabla. Modelo de transistor FET canal n.

field-effect transistor (FET)

Modelo de transistor FET canal p. Otra línea es dibujada en forma paralela al canal para destacar la compuerta.

La conexión del sustrato, en los casos donde se muestra, se coloca en la parte central del canal con una flecha que indica si el transistor es PMOS o NMOS. Para aquellos símbolos en los que la terminal del sustrato se muestra, aquí se representa conectada internamente al surtidor.

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A hybrid hard disk drive is an electromechanical spinning hard disk that contains some amount of NAND Flash memory. This was last updated in April Add My Comment Register.

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